View MRF6S18100N_549062.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Freescale Semiconductor Technical Data
Document Number: MRF6S18100N Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications. GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 100 Watts, Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain -- 14.5 dB Drain Efficiency -- 49% GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 40 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain -- 15 dB Drain Efficiency -- 35% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM -- 2% rms * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * 200C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S18100NR1 MRF6S18100NBR1
1805- 1990 MHz, 100 W, 28 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 MRF6S18100NR1
CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 MRF6S18100NBR1
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +12 343 1.96 - 65 to +175 200 Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 100 CW Case Temperature 77C, 40 CW Symbol RJC Value(1,2) 0.51 0.62 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S18100NR1 MRF6S18100NBR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 900 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3.3 Adc) Dynamic Characteristics(1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point 1. Part internally matched both on input and output. (continued) Crss -- 1.5 -- pF VGS(th) VGS(Q) VDS(on) gfs 1.6 1.5 -- -- 2 2.8 0.24 5.3 3 3.5 -- -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 500 Adc Adc nAdc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 100 W, IDQ = 900 mA, f = 1930- 1990 MHz Gps D IRL P1dB 13 47 -- 100 14.5 49 - 12 110 16 -- -9 -- dB % dB W
MRF6S18100NR1 MRF6S18100NBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted (continued)
Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 40 W Avg., 1805- 1880 MHz or 1930 - 1990 MHz EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 15 35 2 - 63 - 76 -- -- -- -- -- dB % % rms dBc dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W, 1805- 1880 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point Gps D IRL P1dB -- -- -- -- 14.5 49 - 12 110 -- -- -- -- dB % dB W
MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 3
R1 VBIAS + R2 C1 C2 Z6 Z13 RF INPUT R3 Z1 C6 C7 C8 Z2 Z3 Z4 Z5 Z7 Z8 Z9 Z10 Z11 C10 Z12 RF OUTPUT C3 C4 C5 C14 VSUPPLY
DUT Z14
C9
VSUPPLY C11 C12 C13
Z1, Z12 Z2* Z3* Z4* Z5 Z6 Z7, Z8
0.250 x 0.083 Microstrip 0.450 x 0.083 Microstrip 0.535 x 0.083 Microstrip 0.540 x 0.083 Microstrip 0.365 x 1.000 Microstrip 1.190 x 0.080 Microstrip 0.115 x 1.000 Microstrip
Z9 Z10* Z11* Z13, Z14 PCB
0.485 x 1.000 Microstrip 0.590 x 0.083 Microstrip 0.805 x 0.083 Microstrip 0.870 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
*Variable for tuning.
Figure 1. MRF6S18100NR1(NBR1) Test Circuit Schematic -- 1930 - 1990 MHz Table 6. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values -- 1930 - 1990 MHz
Part C1 C2, C3, C6, C10, C11 C4, C5, C12, C13 C7 C8 C9 C14 R1, R2 R3 Description 100 nF Chip Capacitor (1206) 6.8 pF 600B Chip Capacitors 4.7 F Chip Capacitors (1812) 0.3 pF 700B Chip Capacitor 1.3 pF 600B Chip Capacitor 0.5 pF 600B Chip Capacitor 470 F, 63 V Electrolytic Capacitor, Radial 10 k, 1/4 W Chip Resistors (1206) 10 , 1/4 W Chip Resistor (1206) Part Number 1206C104KAT 600B6R8BW C4532X5R1H475MT 700B0R3BW 600B1R3BW 600B0R5BW 13661471 Manufacturer AVX ATC TDK ATC ATC ATC Philips
MRF6S18100NR1 MRF6S18100NBR1 4 RF Device Data Freescale Semiconductor
C14
R1 R2 C1 C2 C3
C4 C5
R3
C6 C7 C8 CUT OUT AREA C10 C9
C11
C12 C13
MRF6S18100N Rev. 0
Figure 2. MRF6S18100NR1(NBR1) Test Circuit Component Layout -- 1930 - 1990 MHz
MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS -- 1930 - 1990 MHz
17 D D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 16 IRL 15 Gps 14 VDD = 28 Vdc IDQ = 900 mA 13 1900 1920 1940 1960 1980 2000 20 2020 -40 30 40 50 -10 60 0 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB)
-20
-30
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 100 Watts
17
60
0
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
16 IRL 15 Gps 14 D VDD = 28 Vdc IDQ = 900 mA 13 1900 1920 1940 1960 1980 2000
50
-10
40
-20
30
-30
20 2020
-40
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 40 Watts
16
IDQ = 1350 mA Gps, POWER GAIN (dB) 1125 mA 900 mA
16 14
15 Gps, POWER GAIN (dB)
12 10
32 V 28 V
14 665 mA 13 450 mA 12 VDD = 28 Vdc f = 1960 MHz 11 1 10 Pout, OUTPUT POWER (WATTS) 100
8 6 VDD = 12 V 4 2 0 20 40 60 80 20 V 100 120 24 V 16 V IDQ = 900 mA f = 1960 MHz 140 160
Pout, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
MRF6S18100NR1 MRF6S18100NBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 1930 - 1990 MHz
TC = -30_C D Gps -30_C 25_C 85_C 12 10 8 1 10 Pout, OUTPUT POWER (WATTS) CW 100 20 10 0 30 EVM, ERROR VECTOR MAGNITUDE (% rms) VDD = 28 Vdc IDQ = 900 mA f = 1960 MHz 5 25_C 50 85_C 40 D, DRAIN EFFICIENCY (%) VDD = 28 Vdc IDQ = 700 mA 4 Pout = 61 W Avg.
18 Gps, POWER GAIN (dB) 16 14
3 44 W Avg. 2 20 W Avg.
1
0 1920 1940 1960 1980 2000 f, FREQUENCY (MHz)
Figure 7. Power Gain and Drain Efficiency versus CW Output Power
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
Figure 8. EVM versus Frequency
12 EVM, ERROR VECTOR MAGNITUDE (% rms) 10 8 6 4
D, DRAIN EFFICIENCY (%)
VDD = 28 Vdc IDQ = 700 mA f = 1960 MHz EDGE Modulation
60 TC = -30_C 50 40 25_C 30 20 85_C EVM 10 0 100
-50 -55 -60 -65
SR @ 400 kHz Pout = 61 W Avg.
44 W Avg.
D
20 W Avg. -70 -75 -80 -85 1900 44 W Avg. 1920 1940 1960 20 W Avg. 1980 SR @ 600 kHz 61 W Avg.
VDD = 28 Vdc IDQ = 700 mA f = 1960 MHz EDGE Modulation
2 0 1 10
2000
2020
Pout, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
Figure 9. EVM and Drain Efficiency versus Output Power
Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency
-40 SPECTRAL REGROWTH @ 400 kHz (dBc) -45 -50 25_C -55 -60 -65 -70 -75 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) TC = -30_C SPECTRAL REGROWTH @ 600 kHz (dBc) VDD = 28 Vdc, IDQ = 700 mA f = 1960 MHz, EDGE Modulation 85_C
-55 -60 -65 25_C -70 -75 -80 -85 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc, IDQ = 700 mA f = 1960 MHz, EDGE Modulation TC = -30_C
85_C
Figure 11. Spectral Regrowth at 400 kHz versus Output Power
Figure 12. Spectral Regrowth at 600 kHz versus Output Power MRF6S18100NR1 MRF6S18100NBR1
RF Device Data Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
1.E+09 MTTF FACTOR (HOURS X AMPS2)
1.E+08
1.E+07
1.E+06 90
100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
GSM TEST SIGNAL
-10 -20 -30 -40 -50 (dB) -60 -70 -80 -90 -100 -110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz
Figure 14. EDGE Spectrum
MRF6S18100NR1 MRF6S18100NBR1 8 RF Device Data Freescale Semiconductor
Zo = 5
f = 2020 MHz f = 2020 MHz Zload
Zsource f = 1900 MHz
f = 1900 MHz
VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W f MHz 1900 1930 1960 1990 2020 Zsource W 2.80 - j4.53 2.71 - j4.27 2.63 - j4.03 2.56 - j3.79 2.51 - j3.57 Zload W 1.75 - j3.52 1.67 - j3.25 1.59 - j2.99 1.52 - j2.74 1.47 - j2.51
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance -- 1930 - 1990 MHz
MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 9
R1 VBIAS + R2 C1 C2 Z6 Z14 RF INPUT R3 Z1 C6 C7 C8 C9 Z2 Z3 Z4 Z5 Z7 Z8 Z9 Z10 Z11 Z12 C13 Z13 RF OUTPUT C3 C4 C5 C17 VSUPPLY
DUT Z15
C10
C11
C12
VSUPPLY C14 C15 C16
Z1, Z13 Z2* Z3* Z4* Z5 Z6 Z7, Z8
0.250 x 0.083 Microstrip 0.620 x 0.083 Microstrip 0.715 x 0.083 Microstrip 0.190 x 0.083 Microstrip 0.365 x 1.000 Microstrip 1.190 x 0.080 Microstrip 0.115 x 1.000 Microstrip
Z9 Z10* Z11* Z12* Z14, Z15 PCB
0.485 x 1.000 Microstrip 0.080 x 0.083 Microstrip 0.340 x 0.083 Microstrip 0.975 x 0.083 Microstrip 0.960 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
*Variable for tuning.
Figure 16. MRF6S18100NR1(NBR1) Test Circuit Schematic -- 1805 - 1880 MHz Table 7. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values -- 1805 - 1880 MHz
Part C1 C2, C3, C6, C13, C14 C4, C5, C15, C16 C7, C8, C11, C12 C9 C10 C17 R1, R2 R3 Description 100 nF Chip Capacitor (1206) 8.2 pF 600B Chip Capacitors 4.7 F Chip Capacitors (1812) 0.2 pF 700B Chip Capacitors 1 pF 600B Chip Capacitor 0.5 pF 600B Chip Capacitor 470 F, 63 V Electrolytic Capacitor, Radial 10 k, 1/4 W Chip Resistor (1206) 10 , 1/4 W Chip Resistor (1206) Part Number 1206C104KAT 600B8R2BW C4532X5R1H475MT 700B0R2BW 600B1R0BW 600B0R5BW 13661471 Manufacturer AVX ATC TDK ATC ATC ATC Philips
MRF6S18100NR1 MRF6S18100NBR1 10 RF Device Data Freescale Semiconductor
C17
R1 R2 C1 C2 C3 C4 C5
R3
C6 CUT OUT AREA C7 C8 C9
C10 C13 C11 C12
C14
C15 C16
MRF6S18100N Rev. 0
Figure 17. MRF6S18100NR1(NBR1) Test Circuit Component Layout -- 1805 - 1880 MHz
MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 11
TYPICAL CHARACTERISTICS -- 1805 - 1880 MHz
17 D 16 Gps, POWER GAIN (dB) 50 D, DRAIN EFFICIENCY (%) 0 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 60
15
Gps
40
-10
14
IRL
30
-20
13 VDD = 28 Vdc IDQ = 900 mA 12 1800 1810 1820 1830 1840 1850 1860 1870
20 10 1880
-30
-40
f, FREQUENCY (MHz)
Figure 18. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 100 Watts
16
IRL Gps
50
-10
15 D
40
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
-20
14 VDD = 28 Vdc IDQ = 900 mA 13 1800 1810 1820 1830 1840 1850 1860
30
-30
20 1870 1880
-40
f, FREQUENCY (MHz)
Figure 19. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 40 Watts
6 EVM, ERROR VECTOR MAGNITUDE (% rms) EVM, ERROR VECTOR MAGNITUDE (% rms) VDD = 28 Vdc IDQ = 700 mA 5 Pout = 60 W Avg. 4
10 VDD = 28 Vdc IDQ = 700 mA f = 1840 MHz EDGE Modulation
50
6 D 4 TC = 25_C
30
3 42 W Avg. 2 25 W Avg. 1820 1840 1860 1880 1900
20
2 0 1 10
EVM
10 0 100
1 1800
f, FREQUENCY (MHz)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 20. EVM versus Frequency
Figure 21. EVM and Drain Efficiency versus Output Power
MRF6S18100NR1 MRF6S18100NBR1 12 RF Device Data Freescale Semiconductor
D, DRAIN EFFICIENCY (%)
8
40
TYPICAL CHARACTERISTICS -- 1805 - 1880 MHZ
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
-45 -50 -55 -60 -65 -70 -75 -80 -85 1780 25 W Avg. 1800 1820 1840 1860 1880 1900 1920 SR @ 600 kHz 25 W Avg. 60 W Avg. 42 W Avg. VDD = 28 Vdc IDQ = 700 mA f = 1960 MHz SR @ 400 kHz Pout = 60 W Avg.
42 W Avg.
f, FREQUENCY (MHz)
Figure 22. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency
-45 SPECTRAL REGROWTH @ 400 kHz (dBc) -50 -55 -60 -65 -70 -75 0 20 40 60 80 Pout, OUTPUT POWER (WATTS) TC = 25_C SPECTRAL REGROWTH @ 600 kHz (dBc) VDD = 28 Vdc, IDQ = 700 mA f = 1840 MHz, EDGE Modulation
-60 VDD = 28 Vdc, IDQ = 700 mA f = 1840 MHz, EDGE Modulation -65
-70 TC = 25_C
-75
-80 -85 0 20 40 60 80 Pout, OUTPUT POWER (WATTS)
Figure 23. Spectral Regrowth at 400 kHz versus Output Power
Figure 24. Spectral Regrowth at 600 kHz versus Output Power
MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 13
Zo = 5
f = 1900 MHz
Zload f = 1780 MHz
f = 1900 MHz Zsource f = 1780 MHz
VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W f MHz 1780 1804 1840 1880 1900 Zsource W 1.96 - j4.09 1.90 - j3.86 1.82 - j3.53 1.76 - j3.16 1.72 - j2.97 Zload W 1.94 - j2.90 1.88 - j2.67 1.80 - j2.42 1.73 - j1.99 1.70 - j1.82
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 25. Series Equivalent Source and Load Impedance -- 1805 - 1880 MHz
MRF6S18100NR1 MRF6S18100NBR1 14 RF Device Data Freescale Semiconductor
NOTES
MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 15
PACKAGE DIMENSIONS
B E1 E3
2X
A
GATE LEAD
DRAIN LEAD
D1
4X
D e
4X
aaa
M
b1 CA
D2 c1 H
DATUM PLANE ZONE J
2X
2X
E
F
A1 A2 E2 E5 E4
2X
A
NOTE 7
C
SEATING PLANE
PIN 5
NOTE 8
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 --- .551 .559 .353 .357 .132 .140 .124 .132 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 --- 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10
4
D3
3
MRF6S18100NR1 MRF6S18100NBR1 16 RF Device Data Freescale Semiconductor
CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC
E5 BOTTOM VIEW
1
2
DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa
STYLE 1: PIN 1. 2. 3. 4. 5.
CASE 1486 - 03 ISSUE C TO - 270 WB - 4 MRF6S18100NR1
MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 17
MRF6S18100NR1 MRF6S18100NBR1 18 RF Device Data Freescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 19
How to Reach Us:
Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF6S18100NR1 MRF6S18100NBR1
Rev. 20 1, 5/2006 Document Number: MRF6S18100N
RF Device Data Freescale Semiconductor

▲Up To Search▲

Price & Availability of MRF6S18100N

	To Download MRF6S18100N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .